发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME |
摘要 |
A semiconductor structure includes a gate structure disposed on a substrate. At least one lightly doped region adjoins the gate structure in the substrate. The at least one lightly doped region has a first conductivity type. A source feature and a drain feature are on opposite sides of the gate structure in the substrate. The source feature and the drain feature have the first conductivity type. The source feature is in the at least one lightly doped region. A buck pick-up region adjoins the source feature in the at least one lightly doped region. The buck pick-up region has a second conductivity type. |
申请公布号 |
US2013292781(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201213465885 |
申请日期 |
2012.05.07 |
申请人 |
CHEN PO-YU;HUANG WAN-HUA;CHEN JING-YING;WU KUO-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN PO-YU;HUANG WAN-HUA;CHEN JING-YING;WU KUO-MING |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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