发明名称 CHARGE STORAGE ORGANIC MEMORY SYSTEM
摘要 A memory system is disclosed. The system comprises a memory layer between a first layer and a second layer, wherein the first layer and the second layer are configured to apply an electrical bias to the memory layer. In some embodiments the memory layer comprises nanodots made of a material selected from the group consisting of peptides and amino acids.
申请公布号 US2013294180(A1) 申请公布日期 2013.11.07
申请号 US201213979661 申请日期 2012.01.12
申请人 LITSYN SIMON;ROSENMAN GIL;RAMOT AT TEL-AVLV UNIVERSITY LTD. 发明人 LITSYN SIMON;ROSENMAN GIL
分类号 H01L29/06;G11C7/00 主分类号 H01L29/06
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