发明名称 METHOD FOR INJECTING DOPANT INTO BASE BODY TO BE PROCESSED, AND PLASMA DOPING APPARATUS
摘要 <p>Provided is a method for injecting a dopant into a base body to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a base body to be processed; and (b) a step for injecting a dopant into the base body by supplying a doping gas containing AsH3, an inert gas, and H2 gas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container. In the step of injecting the dopant, the ratio of hydrogen partial pressure to the gas total pressure in the processing container is set within the range of 0.0015-0.003.</p>
申请公布号 WO2013164940(A1) 申请公布日期 2013.11.07
申请号 WO2013JP60509 申请日期 2013.04.05
申请人 TOKYO ELECTRON LIMITED 发明人 HORIGOME MASAHIRO;UEDA HIROKAZU;OKA MASAHIRO;YAMAZAKI MASAHIRO;NEMOTO TAKENAO
分类号 H01L21/265;H05H1/46 主分类号 H01L21/265
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