发明名称 |
METHOD OF FORMING A COMPOSITE SUBSTRATE |
摘要 |
In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate-a layer|)/asubstrate]*100% is no more than 1%. |
申请公布号 |
KR20130122636(A) |
申请公布日期 |
2013.11.07 |
申请号 |
KR20137013916 |
申请日期 |
2011.10.26 |
申请人 |
KONINKLIJKE PHILIPS N.V. |
发明人 |
GARDNER NATHAN FREDRICK;MCLAURIN MELVIN BARKER;GRUNDMANN MICHAEL JASON;GOETZ WERNER;EPLER JOHN EDWARD;YE QI |
分类号 |
C30B25/18;C30B23/02;C30B29/40 |
主分类号 |
C30B25/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|