发明名称 |
MEMORY DEVICE, MEMORY CONTROLLER, AND MEMORY SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a memory device, a memory controller, and a memory system which improve write characteristics.SOLUTION: A memory device of the invention comprises: a memory cell array that includes a plurality of volatile memory cell rows including weak cell rows and normal cell rows; a command decoder that receives a command; an address table that stores a plurality of weak cell row addresses for identifying corresponding weak cell rows; and a refresh control circuit that controls operation of the memory cell array to periodically refresh the plurality of volatile memory cell rows. In response to the command decoder receiving a write command for writing a weak cell row identified by a weak cell row address stored in the address table, the refresh control circuit causes a refresh operation of the weak cell row. |
申请公布号 |
JP2013229096(A) |
申请公布日期 |
2013.11.07 |
申请号 |
JP20130091188 |
申请日期 |
2013.04.24 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM SANG-YUN;SON JONG-PIL;KIM SU-AH;PARK CHEOL-WOO;KO OZEN |
分类号 |
G11C11/406 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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