发明名称 MEMORY DEVICE, MEMORY CONTROLLER, AND MEMORY SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a memory device, a memory controller, and a memory system which improve write characteristics.SOLUTION: A memory device of the invention comprises: a memory cell array that includes a plurality of volatile memory cell rows including weak cell rows and normal cell rows; a command decoder that receives a command; an address table that stores a plurality of weak cell row addresses for identifying corresponding weak cell rows; and a refresh control circuit that controls operation of the memory cell array to periodically refresh the plurality of volatile memory cell rows. In response to the command decoder receiving a write command for writing a weak cell row identified by a weak cell row address stored in the address table, the refresh control circuit causes a refresh operation of the weak cell row.
申请公布号 JP2013229096(A) 申请公布日期 2013.11.07
申请号 JP20130091188 申请日期 2013.04.24
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM SANG-YUN;SON JONG-PIL;KIM SU-AH;PARK CHEOL-WOO;KO OZEN
分类号 G11C11/406 主分类号 G11C11/406
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