| 摘要 |
A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure comprises an insulating substrate, a plurality of LED chips and a plurality of interconnection layers. Each LED chip comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked in sequence on a surface of the insulating substrate. Each LED chip includes a mesa structure, an exposed portion of the first conductivity type semiconductor layer adjacent to the mesa structure, and a first isolation trench. The first isolation trench is disposed in the mesa structure. The interconnection layers respectively connect neighboring two of the LED chips.
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