发明名称 |
CU PILLAR BUMP WITH ELECTROLYTIC METAL SIDEWALL PROTECTION |
摘要 |
A method of forming a bump structure includes providing a semiconductor substrate and forming an under-bump-metallurgy (UBM) layer on the semiconductor substrate. The method further includes forming a mask layer on the UBM layer, wherein the mask layer has an opening exposing a portion of the UBM layer. The method further includes forming a copper layer in the opening of the mask layer and removing a portion of the mask layer to form a space between the copper layer and the mask layer. The method further includes performing an electrolytic process to fill the space with a metal layer and removing the mask layer.
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申请公布号 |
US2013295762(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201313927753 |
申请日期 |
2013.06.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LU WEN-HSIUNG;CHENG MING-DA;LIN CHIH-WEI;CHANG JACKY;LIU CHUNG-SHI;YU CHEN-HUA |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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