发明名称 |
Semiconductor Device and Method of Forming TSV Semiconductor Wafer with Embedded Semiconductor Die |
摘要 |
A semiconductor device has a TSV semiconductor wafer with a cavity formed in a first surface of the wafer. A second cavity can be formed in a second surface of the wafer. A plurality of semiconductor die is mounted within the cavities. The semiconductor die can be mounted side-by-side and/or stacked within the cavity. Conductive TSV can be formed through the die. An encapsulant is deposited within the cavity over the die. A CTE of the die is similar to a CTE of the encapsulant. A first interconnect structure is formed over a first surface of the encapsulant and wafer. A second interconnect structure is formed over a second surface of the encapsulant and wafer. The first and second interconnect structure are electrically connected to the TSV wafer. A second semiconductor die can be mounted over the first interconnect structure with encapsulant deposited over the second die.
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申请公布号 |
US2013292851(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201313936099 |
申请日期 |
2013.07.05 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
PAGAILA REZA A.;LIN YAOJIAN;YOON SEUNG UK |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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