| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-breakdown-voltage and inexpensive semiconductor device having a triple well structure.SOLUTION: A semiconductor device comprises: a first well of a second conductivity type opposite to a first conductivity type formed on a surface layer of a semiconductor substrate of the first conductivity type; a second well of the first conductivity type formed separately from the semiconductor substrate in the first well; an electric field relaxation region of the second conductivity type formed separately from the first well in the second well; and an embedded region of the first conductivity type formed in the second well and having higher impurity concentration than the second well. The embedded region is formed between a side surface and a bottom surface of the second well and the electric field relaxation region, and separated from the first well. |
