METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR CRYSTAL OF NITRIDE OF GROUP 13 METAL IN PERIODIC TABLE

摘要

PROBLEM TO BE SOLVED: To provide a method capable of effectively growing a crystal of nitride of group 13 metal in a periodic table, suppressing surface roughness.SOLUTION: A surface area S of a liquid material or a solid material contactable to reactive gas is 45 cmor more, a ratio (S/F) of S and flowing quantity F(cm/s) per unit time of the reactive gas is 13 or more, or a ratio (L/L) of a flowing passage length Lof the reactive gas passing over a surface of the liquid material or the solid material to a height Lof a space for a gas flowing passage is 6 or more, when generating gas containing a group 13 metal element in a periodic table by bringing the liquid material or the solid material containing the group 13 metal element in the periodic table into contact with the reactive gas and then growing semiconductor crystal of nitride of group 13 metal element in the periodic table on a ground substrate using the generated gas.