SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of improving characteristics of a semiconductor device.SOLUTION: A method for manufacturing a semiconductor device for electrically connecting bump electrodes (BPa, BPb) by bonding a first substrate Sa in which the bump electrode BPa is formed on one surface thereof and a second substrate Sb in which the bump electrode BPb is formed on one surface thereof comprises the steps of: forming an inorganic insulating film 400a on one surface of the first substrate Sa; forming an organic insulating film 500a on the inorganic insulating film 400a; forming an opening OA2 by dry-etching these laminated films; forming a bump electrode BPa by embedding a conductive film into the opening OA2; and bonding one surface of the first substrate Sa and one surface of the second substrate Sb (bonding step). The method performs surface treatment for the organic insulating film 500a after the opening OA2 formation step and before the bonding step. This allows for improvement in connectivity between substrates.