| 摘要 |
PROBLEM TO BE SOLVED: To provide an indium target the film deposition rate of which can be improved, and to provide a method for manufacturing the same.SOLUTION: A method for manufacturing an indium target includes a step of producing a rolled body of a cast ingot of an indium metal, and a step of performing the heat treatment of the rolled body in the atmosphere. The indium target which is thus manufactured has a sputtering surface whose surface roughness (Ra) after the elapse of the target life 15 hWh is ≤25 μm when the sputtering is performed under the condition of a pressure of 0.1-3 Pa, and a power density of 0.1-6 W/cm. |
