发明名称 |
METHOD OF UNIFORM SELENIZATION AND SULFERIZATION IN A TUBE FURNACE |
摘要 |
A method for high temperature selenization of Cu-In-Ga metal precursor films comprises ramping the precursor film to a temperature between about 350 C and about 450 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres. A partial selenization is performed at a temperature between about 350 C and about 450 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 450 C and about 550 C in an inert gas and at a pressure between about 1 atmosphere and about 2 atmospheres, followed by an additional selenization step at a temperature between about 450 C and about 550 C in a Se-containing atmosphere. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas. |
申请公布号 |
US2013295748(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201213461495 |
申请日期 |
2012.05.01 |
申请人 |
LIANG HAIFAN;VAN DUREN JEROEN;NIJHAWAN SANDEEP;INTERMOLECULAR INC. |
发明人 |
LIANG HAIFAN;VAN DUREN JEROEN;NIJHAWAN SANDEEP |
分类号 |
H01L21/36 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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