| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for efficiently growing a nitride single crystal even under low-pressure conditions.SOLUTION: A method for producing a nitride single crystal comprises a step for controlling a pressure inside a reactor holding a seed crystal 6 having a hexagonal crystal structure, a nitrogen-containing solvent, a raw material 4, and a mineralizer containing fluorine atoms so that the pressure reaches 5-200 MPa and the solvent reaches a supercritical state and/or subcritical state, and growing a nitride single crystal on the surface of the seed crystal 6. It is preferable that the pressure in the reactor is adjusted to 10-200 MPa. Further, in the reactor, the temperature in a region 1 where the raw material 4 is dissolved, is set to be lower than the temperature in a region 2 where the nitride crystal is grown on the surface of the seed crystal 6. |
