发明名称 STORAGE CONTROL DEVICE, MEMORY SYSTEM, INFORMATION PROCESSING SYSTEM, AND STORAGE CONTROL METHOD
摘要 PROBLEM TO BE SOLVED: To suppress an increase in the number of defective cells in a nonvolatile memory.SOLUTION: A second rewrite processing unit executes first rewrite processing in which a memory cell where one of two values is written is rewritten with the other value. A second rewrite processing unit executes second rewrite processing in which a memory cell where the other of the two values is written is rewritten with the one value. If an error occurs during the first rewrite processing, a first retry control unit causes the second rewrite processing to be executed in the memory cell where the first rewrite processing has been executed, and then causes the first rewrite processing to be executed again.
申请公布号 JP2013228767(A) 申请公布日期 2013.11.07
申请号 JP20120098316 申请日期 2012.04.24
申请人 SONY CORP 发明人 NAKANISHI KENICHI;TSUTSUI KEIICHI;FUJINAMI YASUSHI;ADACHI NAOHIRO;OKUBO HIDEAKI;SHINBASHI TATSUO;ISHII TAKESHI
分类号 G06F12/16 主分类号 G06F12/16
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