发明名称 |
GROWTH OF CUBIC CRYSTALLINE PHASE STRUCTURE ON SILICON SUBSTRATES AND DEVICES COMPRISING THE CUBIC CRYSTALLINE PHASE STRUCTURE |
摘要 |
A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught. |
申请公布号 |
WO2013165620(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
WO2013US32613 |
申请日期 |
2013.03.15 |
申请人 |
STC.UNM |
发明人 |
BRUECK, STEVEN, R., J.;LEE, SEUNG-CHANG;WETZEL, CHRISTIAN;DETCHPROHM, THEERADETCH;STARK, CHRISTOPH |
分类号 |
H01L21/20;H01L33/12 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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