发明名称 TFT, array substrate including the same and fabricating method thereof
摘要 A thin film transistor, an array substrate including the same, and a method for manufacturing the same are provided to improve an opening ratio by implementing a small-size thin film transistor in a liquid crystal display. A gate line(120) is formed in one direction on a substrate(100). A data line(130) defines a pixel region(P) by being intersected with the gate line in a vertical direction. A gate electrode(125) is extended from the gate line. A gate dielectric is formed on upper portions of the gate line and the gate electrode. An active layer(140) and an ohmic contact layer are formed on an upper portion of the gate dielectric. Source electrodes(132) are formed on upper portions of the active layer and the ohmic contact layer. Plural trench shaped source electrodes are connected to each other. Plural straight line shaped drain electrodes(134) are engaged with the source electrode. The source electrodes are comprised of four trench shapes.
申请公布号 KR101325976(B1) 申请公布日期 2013.11.07
申请号 KR20070023012 申请日期 2007.03.08
申请人 发明人
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
代理机构 代理人
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