发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To make lines of magnetic force incident on the whole periphery of a ground electrode including a part where lines of magnetic force are irregular by correcting the incidence direction and density of the lines of magnetic force.SOLUTION: There is provided a plasma processing apparatus that includes a sample table 112 on which a wafer 128 is mounted, a ring-shaped side wall member 111 which forms and grounds an inner wall surface of a processing chamber 101 above a sample table 112 to constitute an earth electrode, and a solenoid coil 109 which is arranged at a periphery of the processing chamber 101, and processes the wafer 128 arranged in the processing chamber 101 using plasma, a magnetic path having minimum magnetic resistance being constituted between an outermost peripheral edge of the side wall member 111 as the ground electrode and a lowest part of the solenoid coil 109 so that a path length (&Sgr;M) in a conductor of a ferromagnetic body is equal to the total of path lengths (&Sgr;N) in conductors of a nonmagnetic body.
申请公布号 JP2013229150(A) 申请公布日期 2013.11.07
申请号 JP20120099512 申请日期 2012.04.25
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 NAKATANI SHINTARO;TSUBONE TSUNEHIKO;TANIMURA HIDENORI;HASHIMOTO TAKAHISA
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
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