CRUCIBLE FOR GROWING SINGLE CRYSTAL, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON

摘要

PROBLEM TO BE SOLVED: To provide: a crucible for growing a single crystal, capable of manufacturing a single crystal silicon showing higher conversion efficiency than a conventional single crystal silicon by preventing impurities from being mixed when pulling up the single crystal silicon in a CZ method; a method for manufacturing the crucible for growing the single crystal silicon; and a method for manufacturing the single crystal silicon.SOLUTION: A crucible for growing a single crystal, used for growing a single crystal silicon by a Czochralski method, has: a low temperature-melting layer formed in a surface of the crucible body in a side contacting molten silicon, and melting at a lower temperature than the sintering temperature of a crucible body comprising a castable refractory material; and a coating layer showing porosity of 50% or more and having thickness of 0.1 mm or less by applying slurry containing silicon nitride on the low temperature-melting layer and then sintering the same. A method for manufacturing the same and a method for manufacturing the single crystal silicon using the same are also disclosed.