发明名称 CONTROL PLATE AND APPARATUS FOR TREATING SUBSTRATE WITH IT
摘要 The embodiment of the present invention is to provide an apparatus for treating a substrate using a process gas and a control plate with the same. The apparatus for treating a substrate include a chamber providing a space for performing a process, a support member supporting the substrate in the chamber, a gas supply member supplying a process gas to the substrate on the support member, an exhaust assembly purging the gas from the chamber. The exhaust assembly includes an exhaust pipe connected to the chamber, an exhaust member proving a vacuum pressure in the exhaust pipe, a valve controlling the opening rate of the exhaust pipe, and a control plate with a shielding plate in the chamber to interfere the flow of a process gas in the chamber in a direction corresponding to a opening region when a part of the exhaust pipe is opened. Therefore, the process gas is uniformly supplied to the substrate.
申请公布号 KR20130122500(A) 申请公布日期 2013.11.07
申请号 KR20120101619 申请日期 2012.09.13
申请人 SEMES CO., LTD. 发明人 KIM, HYUNG JOON
分类号 H01L21/3065;H01L21/302 主分类号 H01L21/3065
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