| 摘要 |
PROBLEM TO BE SOLVED: To obtain a multi-lamination quantum dot structure body with a large energy difference from an intermediate band to a conduction band by utilizing a wide-gap semiconductor as a semiconductor of a parent body and lowering a position where the intermediate band is formed to the vicinity of the middle of an inhibition band, and to obtain an ideal intermediate band solar battery element by using the same.SOLUTION: A multi-lamination quantum dot structure body provided with an In(Ga)As quantum dot laminated structure, is provided in p-n junction of InGaP. The In(Ga)As quantum dot laminated structure is configured by laminating an arbitrary number of layers of an In(Ga)As quantum dot structure composed of a plurality of In(Ga)As quantum dot layers and a GaAs, or InGaP, or GaAs/InGaP, or InGaAs/GaAs/InGaP buffer layer provided so as to bury InGaAs quantum dots of the In(Ga)As quantum dot layers. |
