| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.
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| 申请公布号 |
US2013295739(A1) |
申请公布日期 |
2013.11.07 |
| 申请号 |
US201213461532 |
申请日期 |
2012.05.01 |
| 申请人 |
HSIAO WEN CHU;CHONG LAI WAN;WANG CHUN-CHIEH;CHOU YING MIN;KO HSIANG HSIANG;WANG YING-LANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIAO WEN CHU;CHONG LAI WAN;WANG CHUN-CHIEH;CHOU YING MIN;KO HSIANG HSIANG;WANG YING-LANG |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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