发明名称 Semiconductor Package and Methods of Formation Thereof
摘要 In one embodiment, a semiconductor package includes a semiconductor chip having a first contact region on a first major surface and a second contact region on an opposite second major surface. The semiconductor chip is configured to regulate flow of a current from the first contact region to the second contact region. An encapsulant is disposed at the semiconductor chip. A first contact plug is disposed within the encapsulant and coupled to the first contact region. A second side conductive layer is disposed under the second major surface and coupled to the second contact region. A through via is disposed within the encapsulant and coupled to the second side conductive layer. The first contact plug and the through via form terminals above the first major surface for contacting the semiconductor package.
申请公布号 US2013292684(A1) 申请公布日期 2013.11.07
申请号 US201213463636 申请日期 2012.05.03
申请人 NIKITIN IVAN;FUERGUT EDWARD;INFINEON TECHNOLOGIES AG 发明人 NIKITIN IVAN;FUERGUT EDWARD
分类号 H01L29/20;H01L21/78;H01L23/48 主分类号 H01L29/20
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