| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a reduced wiring resistance of miniaturized wires.SOLUTION: A semiconductor device comprises: a first wire or a first plug provided at a first interlayer insulating film; a second plug connected to the first wire or the first plug, and provided at a second interlayer insulating film on the first interlayer insulating film; and a second wire integrally formed with the second plug, and provided at a third interlayer insulating film on the second interlayer insulating film. In the semiconductor device, a mask film that has a long opening crossing the first wire or passing immediately above the first plug and crossing the second wire, is provided on the second interlayer insulating film. The second plug is formed at an intersection part of the long opening and the second wire. The second plug and the second wire can be formed by the dual damascene method by using the mask film having the long opening and a mask film for second wire formation. |
