HETEROJUNCTION FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a heterojunction field-effect transistor and a method of manufacturing the same capable of improving a withstanding voltage and reducing on-resistance.SOLUTION: A cap layer 5 made of GaN is selectively formed on a barrier layer 4. That is, the cap layer 5 is formed only in a drain direction gate electrode vicinity region that extends from a position (a first position) adjacent on a drain electrode 8 side to an I-shaped part of a T shape of a gate electrode 10 to a position (a second position; a position separated from the drain electrode 8 by a predetermined distance) not reaching the drain electrode 8, in a direction toward the drain electrode 8 (and an Si injection region 6 under the drain electrode).