| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal type diffusion furnace capable of performing uniform diffusion in a semiconductor substrate surface and in a batch without reduction in productivity, and to provide a method of forming a uniform diffusion layer on a semiconductor substrate by using this diffusion furnace.SOLUTION: A horizontal type diffusion furnace performing thermal diffusion of a dopant for each of a plurality of semiconductor substrates arranged inside a tubular reaction chamber, comprises: a heater heating a dopant gas; a gas supply body provided at the reaction chamber, and having a plurality of gas supply ports for discharging the dopant gas into the reaction chamber toward a first lateral face of the semiconductor substrate; and a gas exhaustion part provided at the reaction chamber, and having a plurality of gas exhaustion ports for exhausting the dopant gas from a second lateral face side different from the first lateral face of the semiconductor substrate to the outside of the reaction chamber. |
