| 摘要 |
A semiconductor memory device and a method for fabricating the sane are disclosed. In the semiconductor device, an insulation film of a drain region is formed to have a thick thickness in a local region such that it improves Hot Carrier Degradation (HCD) characteristics. The semiconductor device includes a first insulation film formed over a semiconductor substrate, a gate formed over the first insulation film, and a second insulation film located at a specific region between the first insulation film and the gate. |
