COMPOUND SEMICONDUCTOR WITH SELECTIVE SPUTTERED FILM AND MANUFACTURING METHOD THEREOF

摘要

The present invention is to improve an ELO(Epitaxial Lateral Overgrowth) process used in the GaN thin film growth of a compound semiconductor. Particularity, by applying a compound semiconductor with a selective sputtered film and a manufacturing method thereof, the up-growth area of the GaN is reduced by an asymmetry coating method of sputtering. There is a defect reduction effect in a growth method maximally using the characteristic of a lateral epitaxial growth. Therefore, power efficiency is improved.