| 摘要 |
A photodiode according to a desired embodiment of the present invention includes: a P+type semiconductor substrate, a P-type epitaxial layer formed on the P+type semiconductor substrate; an N-type epitaxial layer formed on the P-tytpe epitaxial layer; an N+ layer formed on a predetermined region on the N-type epitaxial layer, and the N+ layer is formed in a grid shape separated apart with a predetermined distance. According to a photodiode of a desired embodiment of the present invention, a photodiode with a high optical-electronic conversion efficiency in light of a short wavelength range applicable to a Blu-ray system is able to be provided. Furthermore, according to a photodiode of a desired embodiment of the prevent invention, the optical loss is able to be minimized and the signal interference is able to be reduced by decreasing a distance between the neighboring regions in a photodiode separated in a plurality of regions. |
