| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of flexibly responding to the lowering of a power supply voltage without providing a high breakdown voltage circuit element.SOLUTION: A semiconductor memory device 1 includes word lines WL and memory cells 10 connected to the word lines. One end of each of the word lines is connected with serially connected first and second switch elements TG1 and TG2. A potential fixing circuit 52 fixes a potential at a connection point between the first switch element TG1 and the second switch element TG2. A decoding circuit 30 is connected to the word lines WL via the first and second switch elements; and in response to a control input, outputs a first voltage according to a power supply voltage, from output terminals corresponding to the word lines WL. The other end of each of the word lines is connected with a third switch element TG3. A step-up circuit 40 is connected to the word lines WL via the third switch element TG3; and in response to the control input, outputs a second voltage that is higher than the first voltage, from output terminals corresponding to the word lines WL. |
