发明名称 |
REDUCING POWER IN SRAM USING SUPPLY VOLTAGE CONTROL |
摘要 |
An embodiment of the invention provides a method for decreasing power in a static random access memory (SRAM). A first voltage is applied between latch sourcing and latch sinking supply lines for columns of memory cells that are column addressed during a read cycle. A second voltage is applied between latch sourcing and latch sinking supply lines for columns of memory cells that are not column addressed during a read cycle. Because the second voltage is less than the first voltage, power in the SRAM is reduced. In this embodiment, a memory cell in the SRAM includes at least one read buffer and a latch connected between the latch sourcing and latch sinking supply lines. |
申请公布号 |
US2013294149(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201213461130 |
申请日期 |
2012.05.01 |
申请人 |
DENG XIAOWEI;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DENG XIAOWEI |
分类号 |
G11C5/14;G11C11/00;G11C11/40 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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