发明名称 Thin film with reduced stress anisotropy
摘要 An apparatus and associated method may provide a magnetic element can have a thin film deposited on a cryogenic substrate. The thin film can additionally be stress tuned during primary annealing to reduce unwanted stress anisotropy. The thin film can be configured to have near zero internal stress after the primary annealing.
申请公布号 EP2660817(A1) 申请公布日期 2013.11.06
申请号 EP20130166069 申请日期 2013.04.30
申请人 SEAGATE TECHNOLOGY LLC 发明人 ZHU, MENG;ESTRINE, ELIOT LEWIS CUTHBERT;TIAN, WEI;INTURI, VENKATESWARA;KAUTZKY, MICHAEL CHRISTOPHER
分类号 G11B5/31;H01F41/14 主分类号 G11B5/31
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