| 摘要 |
<p>Provided is a method capable of easily manufacturing a back contact solar cell with high photoelectric conversion efficiency. A second semiconductor layer (25) having a first conductivity which is the same as that of a semiconductor substrate (10) is formed substantially entirely on the principal surface of the semiconductor substrate (10) inclusive of a surface of an insulation layer (23). A portion of a second semiconductor layer (25) located on the insulation layer (23) is removed, and thereby an opening is formed. The insulation layer (23) exposed through the opening is removed while a second semiconductor layer (13n) is used as a mask, and thereby a surface of a first semiconductor region (12p) is partially exposed. Electrodes (14, 15) which are electrically connected to the surface of the first semiconductor region (12p) and to a surface of the second semiconductor layer (13n) respectively are formed.</p> |
