| 摘要 |
<p>The present invention provides a metal organic chemical vapor deposition device and a temperature control method therefor. The device comprises: a chamber; a susceptor which is installed inside the chamber to allow rotation therein, wherein at least one substrate is settled thereon; a plurality of heaters which heat the susceptor, wherein the temperature is independently controlled; a gas sprayer which is positioned in the upper part of the susceptor, and sprays gases of group III and V toward the susceptor; a plurality of temperature detection sensors which are positioned in the upper part of the susceptor, and measure the temperature of heating regions heated by each heater; and a controller which retains temperature setting values necessary for the heating regions, and controls the temperature of the heating regions by comparing sensing temperature values detected by each temperature detection sensor with the setting values necessary for the heating regions. According to the present invention, the metal organic chemical vapor deposition device and the temperature control method therefor can uniformly apply necessary temperature ramping to the entire substrates during process by effectively adjusting the temperature conditions essential for every epitaxial process in the metal organic chemical vapor deposition device, which carries out the process by changing the temperature up to 1200°C from room temperature. Therefore, the invention improves process efficiency and deposition uniformity.</p> |
