SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

A main surface (M80) of a silicon carbide substrate (80) is inclined by an off angle in an off direction from {0001} plane of a hexagonal crystal. The main surface (M80) has such a characteristic that, among emitting regions emitting photoluminescent light (LL) having a wavelength exceeding 650 nm of the main surface caused by excitation light (LE) having higher energy than band-gap of the hexagonal silicon carbide, the number of those having a dimension of at most 15 µm in a direction perpendicular to the off direction and a dimension in a direction parallel to the off direction not larger than a value obtained by dividing penetration length of the excitation light (LL) in the hexagonal silicon carbide by a tangent of the off angle is at most 1 × 10 4 per 1cm 2 . Accordingly, reverse leakage current can be reduced.