发明名称 SUBSTRATE PROCESSING APPARATUE
摘要 A gas injection apparatus and a substrate processing apparatus having the same are provided to prevent a gas from being resolved before the gas reaches a substrate by installing a cooling unit at a gas injection unit. A gas injection apparatus comprises a plurality of gas injection units(210,220), a number of gas supply units(230,240), and a cooling unit(400). Gases with different resolution temperatures are injected through the gas injection units. The gas supply units are connected with the gas injection units and supply different gases to the gas injection units. The cooling unit is installed at the gas injection unit which injects gas with lower resolution temperature.
申请公布号 KR101324208(B1) 申请公布日期 2013.11.06
申请号 KR20070018249 申请日期 2007.02.23
申请人 发明人
分类号 H01L21/02;H01L21/205 主分类号 H01L21/02
代理机构 代理人
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