| 摘要 |
<p>An MOSFET (1) includes a silicon carbide substrate (10), an active layer (20), a gate oxide film (30), and a gate electrode (40). The active layer (20) includes a body region (22) where an inversion layer (29) is formed at a region in contact with the gate oxide film (30) by application of voltage to the gate electrode (40). The body region includes a low concentration region (22B) arranged at a region where an inversion layer (29) is formed, and containing impurities of low concentration, and a high concentration region (22A) adjacent to the low concentration region (22B) in the carrier mobile direction in the inversion layer (29), arranged in a region where the inversion layer (29) is formed, and containing impurities higher in concentration than in the low concentration region (22B).</p> |
