| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for achieving a p-type collector layer, an n-type buffer layer, and an n<SP>-</SP>-type drift layer with optimum design values without limitation in a wafer process, reducing an on-voltage in a low current region, obtaining an excellent on-voltage and a good turn-off loss characteristic, and providing excellent productivity, and also to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device includes: a low-concentration and thin p-type collector layer 1 and a comparatively low-concentration n-type buffer layer 2 arranged on the surface of a high-resistance p-type support substrate 101; and a second trench 11 reaching the p-type collector layer 1 from the backside of the support substrate 101 and a third trench 12 reaching the n-type buffer layer 2. The bottoms and side surfaces of the second and third trenches and the backside of the support substrate are continuously covered with a collector electrode 13. First and second insulating films 105, 106 are respectively and selectively formed on the surfaces of the support substrate 101 and the p-type collector layer 1. The formation places of the insulating films are set only in the neighborhood of a cut line positioned in the periphery of each semiconductor device chip and in the nearest circumference of the wafer. COPYRIGHT: (C)2010,JPO&INPIT |
