发明名称 |
Memory with regulated ground nodes |
摘要 |
Some embodiments regard a memory array comprising: a plurality of memory cells arranged in a plurality of rows and a plurality of columns; wherein a column of the plurality of columns includes a column ground node; at least two voltage sources configured to be selectively coupled to the column ground node; and a plurality of memory cells having a plurality of internal ground nodes electrically coupled together and to the column ground node.
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申请公布号 |
US8576611(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US20100832320 |
申请日期 |
2010.07.08 |
申请人 |
HSU KUOYUAN (PETER);TANG YUKIT;TAO DEREK;KIM YOUNG SEOG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU KUOYUAN (PETER);TANG YUKIT;TAO DEREK;KIM YOUNG SEOG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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