发明名称 Memory with regulated ground nodes
摘要 Some embodiments regard a memory array comprising: a plurality of memory cells arranged in a plurality of rows and a plurality of columns; wherein a column of the plurality of columns includes a column ground node; at least two voltage sources configured to be selectively coupled to the column ground node; and a plurality of memory cells having a plurality of internal ground nodes electrically coupled together and to the column ground node.
申请公布号 US8576611(B2) 申请公布日期 2013.11.05
申请号 US20100832320 申请日期 2010.07.08
申请人 HSU KUOYUAN (PETER);TANG YUKIT;TAO DEREK;KIM YOUNG SEOG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HSU KUOYUAN (PETER);TANG YUKIT;TAO DEREK;KIM YOUNG SEOG
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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