发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor substrate by emitting a second laser alone a second scanning direction. The first scanning direction and the second scanning direction have an included angle.
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申请公布号 |
US8575043(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113191430 |
申请日期 |
2011.07.26 |
申请人 |
YANG CHAN-LON;KUO TZU-FENG;WU HSIN-HUEI;LI CHING-I;CHAN SHU-YEN;UNITED MICROELECTRONICS CORP. |
发明人 |
YANG CHAN-LON;KUO TZU-FENG;WU HSIN-HUEI;LI CHING-I;CHAN SHU-YEN |
分类号 |
H01L21/00;B23K26/02;B23K26/08 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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