发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor substrate by emitting a second laser alone a second scanning direction. The first scanning direction and the second scanning direction have an included angle.
申请公布号 US8575043(B2) 申请公布日期 2013.11.05
申请号 US201113191430 申请日期 2011.07.26
申请人 YANG CHAN-LON;KUO TZU-FENG;WU HSIN-HUEI;LI CHING-I;CHAN SHU-YEN;UNITED MICROELECTRONICS CORP. 发明人 YANG CHAN-LON;KUO TZU-FENG;WU HSIN-HUEI;LI CHING-I;CHAN SHU-YEN
分类号 H01L21/00;B23K26/02;B23K26/08 主分类号 H01L21/00
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