发明名称 Sub-wavelength lithography via rabi oscillations
摘要 A sub-wavelength photolithographic method includes exposing a photoresist material to a stimulating electromagnetic source prior to further exposing the photoresist material to a dissociating electromagnetic source. The stimulating electromagnetic source induces Rabi oscillations in the photoresist material between a first molecular state and an excited molecular state. The subsequent exposure of the photoresist material to the dissociating electromagnetic source dissociates only those molecules that are in the excited state, altering the properties of the photoresist material in zones of excited state molecules. The resulting patterns therefore depend on the spatial distribution of the zones of excited state molecules induced by the stimulating electromagnetic source. The properties of the stimulating electromagnetic source are controlled to achieve a desired spatial distribution of zones of excited state molecules of the photoresist material.
申请公布号 US8574824(B2) 申请公布日期 2013.11.05
申请号 US201313888974 申请日期 2013.05.07
申请人 THE TEXAS A&M UNIVERSITY SYSTEM;KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY;KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOY 发明人 ZUBAIRY MUHAMMAD SUHAIL;LIAO ZEYANG;AL-AMRI MOHAMMAD D.
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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