发明名称 Semiconductor device
摘要 A semiconductor device, which exhibits an increased design flexibility for a capacitor element, and can be manufactured with simple method, is provided. A semiconductor device 100 includes: a silicon substrate 101; an interlayer film 103 provided on the silicon substrate 101; a multiple-layered interconnect embedded in the interlayer film 103; a flip-chip pad 111, provided so as to be opposite to an upper surface of an uppermost layer interconnect 105 in the multiple-layered interconnect and having a solder ball 113 for an external coupling mounted thereon; and a capacitance film 109 provided between said uppermost layer interconnect 105 and the flip-chip pad 111. Such semiconductor device 100 includes the flip-chip pad 111 composed of an uppermost layer interconnect 105, a capacitive film 109 and a capacitor element 110.
申请公布号 US8575721(B2) 申请公布日期 2013.11.05
申请号 US201213592910 申请日期 2012.08.23
申请人 OKAMURA RYUICHI;RENESAS ELECTRONICS CORPORATION 发明人 OKAMURA RYUICHI
分类号 H01L21/02;H01L23/48;H01L23/52;H01L29/40 主分类号 H01L21/02
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