发明名称 |
Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device |
摘要 |
A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.
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申请公布号 |
US8574793(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113327008 |
申请日期 |
2011.12.15 |
申请人 |
KOMINATO ATSUSHI;HASHIMOTO MASAHIRO;IWASHITA HIROYUKI;HOYA CORPORATION |
发明人 |
KOMINATO ATSUSHI;HASHIMOTO MASAHIRO;IWASHITA HIROYUKI |
分类号 |
G03F1/50 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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