CRUCIBLE FOR GROWING SINGLE CRYSTAL SILICON, METHOD OF MANUFACTURING THE SAME, AND METHOD OF PRODUCING SINGLE CRYSTAL SILICON

摘要

The purpose of the present invention is to provide a crucible for growing single crystal silicon, which enables to manufacture single crystal silicon showing a high conversion efficiency compared to the conventional single crystal silicon by preventing introduction of impurities in lifting single crystal silicon in the Czochralski method (CZ method), a manufacturing method of the crucible for growing single crystal silicon, and a production method of single crystal silicon. In order to realize the purpose, the present invention provides a crucible for growing single crystal which is used in growing single crystal silicon according to the Czochralski method, a manufacturing method of the crucible; and a production method of single crystal silicon using the crucible for growing single crystal, wherein the crucible for growing single crystal silicon comprises a low temperature melting layer, which is formed on the surface of a main body of the crucible on the side in contact with the melting silicon and melts at a lower temperature than the sintering temperature of the main body of the crucible made of amorphous fire-proof materials; and a coating layer with the porosity of 50% or less and the layer thickness of 0.1 mm or more by coating slurry containing silicon nitride on the low temperature melting layer and sintering.