发明名称 |
Method for producing semiconductor crystal, apparatus for crystal production and group 13 element nitride semiconductor crystal |
摘要 |
A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.
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申请公布号 |
US8574532(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113337592 |
申请日期 |
2011.12.27 |
申请人 |
FUJISAWA HIDEO;MIKAWA YUTAKA;MITSUBISHI CHEMICAL CORPORATION |
发明人 |
FUJISAWA HIDEO;MIKAWA YUTAKA |
分类号 |
C01F1/00;C01B21/06;C30B19/00 |
主分类号 |
C01F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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