发明名称 |
Semiconductor devices having tensile and/or compressive strain and methods of manufacturing and design structure |
摘要 |
A semiconductor device having a tensile and/or compressive strain applied thereto and methods of manufacturing the semiconductor devices and design structure to enhance channel strain. The method includes forming a gate structure for an NFET and a PFET and forming sidewalls on the gate structure for the NFET and the PFET using a same deposition and etching process. The method also includes providing stress materials in the source and drain regions of the NFET and the PFET.
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申请公布号 |
US8578305(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US20110984927 |
申请日期 |
2011.01.05 |
申请人 |
CHENG KANGGUO;RADENS CARL J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;RADENS CARL J. |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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