发明名称 |
Semiconductor memory device capable of minimizing current consumption during high speed operation |
摘要 |
A semiconductor memory device includes a signal processing unit configured to generate a control signal corresponding to burst length information and an output controlling unit configured to control an output of a data strobe signal in response to the control signal.
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申请公布号 |
US8576645(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113103409 |
申请日期 |
2011.05.09 |
申请人 |
KIM TAE-KYUN;HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM TAE-KYUN |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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