发明名称 Semiconductor memory device capable of minimizing current consumption during high speed operation
摘要 A semiconductor memory device includes a signal processing unit configured to generate a control signal corresponding to burst length information and an output controlling unit configured to control an output of a data strobe signal in response to the control signal.
申请公布号 US8576645(B2) 申请公布日期 2013.11.05
申请号 US201113103409 申请日期 2011.05.09
申请人 KIM TAE-KYUN;HYNIX SEMICONDUCTOR INC. 发明人 KIM TAE-KYUN
分类号 G11C7/00 主分类号 G11C7/00
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