发明名称 |
Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime |
摘要 |
A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 mus and about 9.9 mus.
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申请公布号 |
US8574528(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US20100876729 |
申请日期 |
2010.09.07 |
申请人 |
SUDARSHAN TANGALI S.;SRIVASTAVA AMITESH;UNIVERSITY OF SOUTH CAROLINA |
发明人 |
SUDARSHAN TANGALI S.;SRIVASTAVA AMITESH |
分类号 |
C01B31/36;C01B21/068;C01B33/00;C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/20;H01L21/302;H01L21/36;H01L29/06;H01L31/00 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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