An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece.
申请公布号
US8575574(B2)
申请公布日期
2013.11.05
申请号
US20100962829
申请日期
2010.12.08
申请人
KANG JIN-HEE;YOU CHUN-GI;PARK SUN;PARK JONG-HYUN;LEE YUL-KYU;SAMSUNG DISPLAY CO., LTD.
发明人
KANG JIN-HEE;YOU CHUN-GI;PARK SUN;PARK JONG-HYUN;LEE YUL-KYU