发明名称 Circuit for generating a dual-mode PTAT current
摘要 The present invention discloses a circuit for generating a dual-mode proportional to absolute temperature (PTAT) current. The circuit includes a voltage stabilizing circuit to provide a voltage reference, and a load current control circuit comprising a first transistor to provide a first load current based on the voltage reference, a second transistor to provide a second load current based on the voltage reference, a first switch to control whether to allow the first load current to flow therethrough in response to different predetermined temperatures, and a second switch to control whether to allow the second load current to flow therethrough in response to the different predetermined temperatures. A resultant current resulting from at least one of the first load current or the second load current has different current magnitudes at the different predetermined temperatures.
申请公布号 US8575912(B1) 申请公布日期 2013.11.05
申请号 US201213476520 申请日期 2012.05.21
申请人 TUNG MING-SHENG;ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. 发明人 TUNG MING-SHENG
分类号 G05F3/16 主分类号 G05F3/16
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